This work deposits(Pb1−xLax)(ZryTi1−y)1−x/4O3(PLZT) thin films, possessing good ferroelectric properties(Pr=14.4 &mgr;C/cm2),onPt/Ti/SiO2/Sisubstrates, usingSrRuO3perovskite as bottom electrodes. Precoating a metallic Ru layer onPt/Ti/SiO2/Sisubstrates prior to depositingSrRuO3bottom electrode further improves the film electrical properties. The optimum ferroelectric properties achieved arePr=25.6 &mgr;C/cm2,Ec=47.1 kV/cm,and&egr;r=1204.Analyzing the elemental depth profiles using secondary ions mass spectroscopy reveals that the presence of the metallic Ru layer effectively suppresses the outward diffusion of Ti and Si species. The interdiffusion between theSrRuO3layer and the subsequently deposited PLZT is also substantially reduced, an effect that is presumed to be the primary factor in improving ferroelectric properties for PLZT thin films. ©1998 American Institute of Physics.