Static compression of silicon in the [100] and in the [111] directions
作者:
Mool C. Gupta,
Arthur L. Ruoff,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 2
页码: 1072-1075
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327714
出版商: AIP
数据来源: AIP
摘要:
High pressures were generated using a diamond indentor technique. The phase transition in silicon loaded in the [100] direction and silicon loaded in the [111] direction under high pressure was studied. From the behavior of electrical resistance of silicon loaded in the [100] direction, it was found that it becomes metallic at about 12.0 GPa in agreement with the previously reported results on silicon using different techniques. However, silicon loaded in the [111] direction becomes metallic at a lower pressure. The silicon transition is highly sensitive to the type of stress applied.
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