Some features of laser annealing of implanted silicon layers
作者:
I.B. Khaibullin,
E.I. Shtyrkov,
M.M. Zaripov,
R.M. Bayazitov,
M.F. Galjautdinov,
期刊:
Radiation Effects
(Taylor Available online 1978)
卷期:
Volume 36,
issue 3-4
页码: 225-233
ISSN:0033-7579
年代: 1978
DOI:10.1080/00337577808240852
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Comparative investigation of the process of the structure reordering of disordered implanted silicon layers after thermal (800°C, 30 min) and pulse laser annealing have been carried out. The new laser method of annealing implanted layers has a number of interesting features which provide great efficiency and locality of semiconductor doping without considerable heating of the base material and redistribution of implanted impurities. On the base analysing of investigation of kinetics of layer photostimulated recrystallization and calculation of temperature fields the possible mechanisms of laser annealing are also discussed.
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