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High‐purity GaAs layers grown by low‐pressure metalorganic chemical vapor deposition

 

作者: M. Razeghi,   F. Omnes,   J. Nagle,   M. Defour,   O. Acher,   P. Bove,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 16  

页码: 1677-1679

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.102233

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report electrical and optical properties of very high purity GaAs epilayers grown by low‐pressure metalorganic chemical vapor deposition using AsH3and triethylgallium as As and Ga sources. An electron mobility of 335 000 cm2/V s at 38 K has been measured for a 12‐&mgr;‐thick layer.

 

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