Back gating of a two-dimensional hole gas in a SiGe quantum well
作者:
C. J. Emeleus,
M. A. Sadeghzadeh,
P. J. Phillips,
E. H. C. Parker,
T. E. Whall,
M. Pepper,
A. G. R. Evans,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 14
页码: 1870-1872
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118729
出版商: AIP
数据来源: AIP
摘要:
A device comprising a low-resistivity, n-type, Si substrate as a back gate to a p-type (boron), remote-doped, SiGe quantum well has been fabricated and characterized. Reverse and forward voltage biasing of the gate with respect to the two-dimensional hole gas in the quantum well allows the density of holes to be varied from8×1011 cm−2down to a measurement-limited value of4×1011 cm−2. This device is used to demonstrate the evolution with decreasing carrier density of a re-entrant insulator state between the integer quantum Hall effect states with filling factors 1 and 3. ©1997 American Institute of Physics.
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