首页   按字顺浏览 期刊浏览 卷期浏览 Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs qua...
Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots

 

作者: J. N. Patillon,   R. Gamonal,   M. Iost,   J. P. Andre´,   B. Soucail,   C. Delalande,   M. Voos,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 68, issue 7  

页码: 3789-3791

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.346307

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Low‐temperature photoluminescence and photoluminescence excitation experiments have been performed on lattice‐matched InGaAs/InP quantum wells, wires, and dots grown by metalorganic vapor‐phase epitaxy and processed by electron‐beam lithography. An enhancement of the intrinsic photoluminescence mechanism is found with decreasing dimensionality.

 

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