Growth behavior and ferroelectric properties of Zr-rich PZT thin films deposited on various Pt electrodes
作者:
Suk-Kyoung Hong,
Yong Eui Lee,
J. Lee,
HyeongJoon Kim,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 23,
issue 1-4
页码: 65-75
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908210140
出版商: Taylor & Francis Group
关键词: PZT;preferred orientation;Pt electrode;ferroelectric property
数据来源: Taylor
摘要:
Pb(Zr, Ti)O3(PZT) thin films were deposited on various Pt substrates using a Pb(Zr0.63, Ti0.37)O3and a Pb target by rf magnetron sputtering. The preferred orientation of PZT films was significantly influenced by a structure of Pt electrode. (100)-oriented PZT films grew on Pt/Ti/SiO2/Si substrate while (ill) PZT films formed on TiOx/Pt/SiO2/Si substrate. TiOx/Pt/Ti/SiO2/Si substrate structure favored growth of a mixed orientation of (100) and (111) PZT films. The preferred orientation could be explained using concepts of lattice matching and minimization of surface energy. Ferroelectric and fatigue characteristics were also investigated and their relationship with microstructure and electrode structure were discussed.
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