Current-controlled linear MOS earthed and floating resistors and their application
作者:
Z.Wang,
期刊:
IEE Proceedings G (Circuits, Devices and Systems)
(IET Available online 1990)
卷期:
Volume 137,
issue 6
页码: 479-481
年代: 1990
DOI:10.1049/ip-g-2.1990.0074
出版商: IEE
数据来源: IET
摘要:
A current-controlled linear MOS earthed resistor that requires only three transistors is realised by means of a new linearisation technique. A nonlinearity within ±1.5% full scale in the 0–4V voltage range for a 5V supply is experimentally achieved with discrete MOS devices. However, much higher linearity can be expected if we choose the ratio of two transistor sizes exactly, according to the derivation in the paper. A floating resistor, derived from the earthed one, is also presented.
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