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Interaction between radiation‐induced defects and the Pt‐related center in silicon

 

作者: Y. M. Weng,   E. Ohta,   M. Sakata,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 51, issue 26  

页码: 2206-2207

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98941

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation‐induced defects remarkably, especially of theAcenter, and lowers the annealing temperature to 220–140 °C for theAandEcenters, respectively. The levelEa(0.23) in the Pt‐doped silicon is the Pt(−/0) level, an acceptor like theAcenter.

 

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