The influence of substrate orientation onp‐type doping was investigated on three different CdTe crystallographic orientations: (111)B, (111)A4°→(110), and (100)4°→(110). Teritarybutylarsenic was used as thep‐type dopant source in a conventional, atmospheric pressure direct alloy growth metalorganic chemical‐vapor deposition growth process. Hall measurements on annealed baseline undoped growths showed high mobility and low carrier concentration material on all three orientations. At high Hg/Te ratios, it was possible to dope the (111)B to the low 1016/cm3range and the (111)A4°→(110) and (100)4°→(110) to the low 1017/cm3range.