Photoluminescence study on the interface of a GaAs/AlxGa1−xAs heterostructure grown by metalorganic chemical vapor deposition
作者:
Katsuhiro Akimoto,
Koshi Tamamura,
Junko Ogawa,
Yoshifumi Mori,
Chiaki Kojima,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 63,
issue 2
页码: 460-464
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.340264
出版商: AIP
数据来源: AIP
摘要:
The interface of a GaAs/AlxGa1−xAs heterostructure grown by metalorganic chemical vapor deposition has been studied by photoluminescence spectroscopy by using a step‐etching technique. Luminescence peaks associated with vacancy complexes emitted from both GaAs and AlxGa1−xAs layers were observed, and these peaks were remarkably intense on both sides of the GaAs/AlxGa1−xAs interface region. This result can be explained by the accumulation of vacancies in the interface region. The cause of this vacancy accumulation at the interface is discussed.
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