Anomalously high ``mobility'' in GaAs
作者:
C. M. Wolfe,
G. E. Stillman,
D. L. Spears,
D. E. Hill,
F. V. Williams,
期刊:
Journal of Applied Physics
(AIP Available online 1973)
卷期:
Volume 44,
issue 2
页码: 732-734
ISSN:0021-8979
年代: 1973
DOI:10.1063/1.1662253
出版商: AIP
数据来源: AIP
摘要:
A high‐purity GaAs sample with a measured room‐temperature mobility of 15 200 cm2/V sec is examined in detail. Resistivity and Hall measurements are in reasonable agreement with a previously developed model which shows that conducting inhomogeneities can result in anomalously high measured mobilities. A sizeable number of precipitates (probably gallium) are observed in the sample.
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