Dynamics of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates
作者:
M. Y. Yen,
T. W. Haas,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 25
页码: 2533-2535
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102878
出版商: AIP
数据来源: AIP
摘要:
We have observed intensity oscillations in reflection high‐energy electron diffraction during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates. These oscillations only exist over a narrow range of growth conditions and their behavior is strongly dependent on the migration kinetics of group III and the molecular dissociative reaction of group V elements.
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