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cw operation of GaInAsSb/AlGaAsSb lasers up to 190 K

 

作者: C. Caneau,   A. K. Srivastava,   J. L. Zyskind,   J. W. Sulhoff,   A. G. Dentai,   M. A. Pollack,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 49, issue 2  

页码: 55-57

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.97350

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Continuous operation of 2.1 &mgr;m wavelength Ga0.84In0.16As0.15Sb0.85/Al0.27Ga0.73As0.04Sb0.96double heterostructure injection lasers has been achieved up to a temperature of 190 K for the first time. The laser wafers were grown by liquid phase epitaxy. In pulsed operation, broad area devices with active layer thicknesses of 0.8–1.0 &mgr;m exhibited room‐temperature threshold current densities as low as 7 kA/cm2.

 

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