Minority carrier lifetime degradation and anneal in neutron irradiated litmum-diffusedn-type silicon
作者:
B.C. Passenheim,
J.A. Naber,
期刊:
Radiation Effects
(Taylor Available online 1970)
卷期:
Volume 2,
issue 4
页码: 229-231
ISSN:0033-7579
年代: 1970
DOI:10.1080/00337576908243984
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The room-tempeterature neutron degradations of the minority carrier lifetimes in lithium-diffused and nonlithium-diffusedn-type float-zone silicon are found to be comparable. The isochronal annealing of 90 per cent of the neutron damage in lithium-diffused material takes place between 300° and 380° K. The dominant contribution to this annealing is attributed to the diffusion of lithium in silicon.
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