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256Kb Ferroelectric nonvolatile memory technology for 1T/1C cell with 100ns read/write time at 3V

 

作者: Tatsumi Sumi,   Nobuyuki Moriwaki,   George Nakane,   Tetsuji Nakakuma,   Yuji Judai,   Yasuhiro Uemoto,   Yoshihisa Nagano,   Shinichiro Hayashi,   Masamichi Azuma,   Tatsuo Otsuki,   Gota Kano,   JosephD. Cuchiaro,   MichaflC. Scott,   LarryD. McMillan,   CarlosA. Paz de Araujo,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1995）
卷期: Volume 6, issue 1-4  

页码: 1-13

 

ISSN:1058-4587

 

年代: 1995

 

DOI:10.1080/10584589508019349

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

A 3V 100ns read/write 256kb ferroelectric nonvolatile memory (FeRAM) is achieved with 1T/1C cells, novel reference cell circuits and cell plate circuits. The FeRAM is fabricated in 1.2um CMOS process with single Aluminum interconnection and Bi based layered perovskite ferroelectric material “Y-l” and has no fatigue even after 1012destructive read and re-write stress cycles.

 

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