Highly uniform ion implants into GaAs by wafer rotation
作者:
Naotaka Uchitomi,
Hitoshi Mikami,
Nobuyuki Toyoda,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 9
页码: 4042-4044
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.344960
出版商: AIP
数据来源: AIP
摘要:
The influence of wafer rotation on implanted dose uniformity was investigated using thermal‐wave measurement to realize highly uniform ion implants into a (001) wafer. It was found that conically rotating ion implantation is an effective way to scramble the scanning ion beam during implantation by using an electrostatic‐scan implantation system with a specially designed wafer station. Furthermore, two‐fold ion implantation was employed to correct the dose inhomogeneity caused by the variation of the tilt angle across a wafer. Based on these considerations, a high dose uniformity of less than 1% across a wafer was achieved.
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