Activation field of ferroelectric (Pb,La)(Zr,Ti)O3thin film capacitors
作者:
T. K. Song,
S. Aggarwal,
A. S. Prakash,
B. Yang,
R. Ramesh,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 15
页码: 2211-2213
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119383
出版商: AIP
数据来源: AIP
摘要:
We report results on the activation field and frequency dependence of the coercive voltage in epitaxial ferroelectric thin film capacitors. Frequency dependent hysteresis loops and pulse width dependent polarization of epitaxialLa0.5Sr0.5CoO3/(Pb,La)(Zr,Ti)O3/La0.5Sr0.5CoO3capacitor structures were measured as a function of La content. The coercive voltages and their frequency dependence vary systematically with increasing La content. We show that the activation field for polarization reversal is directly related to thec/aratio (tetragonality ratio) of the ferroelectric layer. A largerc/aratio leads to a larger field to activate the motion of domain walls through the lattice. An important consequence of a larger activation field is a stronger pulse width dependence of the pulse switched polarization. ©1997 American Institute of Physics.
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