Point‐contact devices are described which have exhibited long‐term stability and reliability. A particular mode of operation of the devices as rf‐biased low‐frequency detectors is described in detail, including a description of how the device drives a resonant circuit to which it is coupled. In this mode of operation the sensitivity of the devices to low‐frequency fields is of the order of 10−9G per root cycle bandwidth. Perfectly clean contacts were made by breaking a notched niobium member at 4.2°K and then remaking contact at the break. Quantum behavior of such contacts is identical to that of ordinary contacts, but effects of microscopic multiple connections at the contact were not observed.