Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament
作者:
Toshiki Makimoto,
Naoki Kobayashi,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 4
页码: 548-550
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115184
出版商: AIP
数据来源: AIP
摘要:
This letter reports the nitridation of GaAs surfaces using N2through a hot tungsten filament. After nitridation, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. For these structures, we determine the sheet nitrogen atom concentration by secondary ion mass spectrometry analysis. The sheet nitrogen atom concentration is proportional to the square root of the N2pressure, indicating that N2molecules are decomposed into nitrogen atoms to adsorb on the GaAs surfaces. The activation energy of this decomposition process is 3.6±0.4 eV. ©1995 American Institute of Physics.
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