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Regenerative pulsations in semiconductor etalon due to competition between carrier generation and heating effects on band filling

 

作者: Valery I. Tolstikhin,   Alexander V. Grigor’yants,   Theo G. van de Roer,  

 

期刊: Journal of Applied Physics  (AIP Available online 1997)
卷期: Volume 82, issue 5  

页码: 2023-2030

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.366099

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Competition between carrier concentration and effective temperature effects on the dielectric function of a degenerate semiconductor in a spectral range near its fundamental absorption edge is suggested as a mechanism for regenerative pulsations in a stationary pumped optical etalon. The origin of self-pulsations is similar to that in a bistable etalon with competing concentration and thermal optical nonlinearities, but, due to its purely electronic nature, the proposed mechanism provides a way for a much higher repetition frequency, probably in the GHz range. The model of the phenomenon and modeling examples are all related to a Fabry–Perot resonator filled with the bulkn+-In0.53Ga0.47Asas an active medium. ©1997 American Institute of Physics.

 

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