Regenerative pulsations in semiconductor etalon due to competition between carrier generation and heating effects on band filling
作者:
Valery I. Tolstikhin,
Alexander V. Grigor’yants,
Theo G. van de Roer,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 5
页码: 2023-2030
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366099
出版商: AIP
数据来源: AIP
摘要:
Competition between carrier concentration and effective temperature effects on the dielectric function of a degenerate semiconductor in a spectral range near its fundamental absorption edge is suggested as a mechanism for regenerative pulsations in a stationary pumped optical etalon. The origin of self-pulsations is similar to that in a bistable etalon with competing concentration and thermal optical nonlinearities, but, due to its purely electronic nature, the proposed mechanism provides a way for a much higher repetition frequency, probably in the GHz range. The model of the phenomenon and modeling examples are all related to a Fabry–Perot resonator filled with the bulkn+-In0.53Ga0.47Asas an active medium. ©1997 American Institute of Physics.
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