A mesoscopic/macroscopic model for self-consistent charged transport under high field scaling conditions corresponding to drift-collisions balance was derived by Cercignani, Gamba, and Lever-more in [4]. The model was summarized in relationship to semiconductors in [2]. In [3], a conceptual domain decomposition method was implemented, based upon use of the drift-diffusion model in highly-doped regions of the device, and use of the high-field model in the channel, which represents a (relatively) lightly-doped region. The hydrodynamic model was used to calibrate interior boundary conditions. The material parameters of GaAs were employed in [3].