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Influence of the Hall Effect upon the Transverse Magnetoresistance in Indium Antimonide

 

作者: Charles A. Simmons,  

 

期刊: Journal of Applied Physics  (AIP Available online 1961)
卷期: Volume 32, issue 10  

页码: 1970-1974

 

ISSN:0021-8979

 

年代: 1961

 

DOI:10.1063/1.1728273

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A detailed experimental investigation of the influence of the specimen geometry on the transverse magnetoresistance has been made. Differentiation between the bulk properties and the geometrical contributions has been accomplished. It was found that the enhancement of the magnetoresistance effect in rectangular elements is due to the Hall effect rather than to its absence and that the bulk property has anH2relationship while the geometry effect is linear withHand inversely proportional to the length‐to‐width ratio.

 

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