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Theoretical consideration of misfit dislocation nucleation by partial dislocations in [001] strained‐layer heterostructures

 

作者: J. Zou,   D. J. H. Cockayne,  

 

期刊: Journal of Applied Physics  (AIP Available online 1993)
卷期: Volume 74, issue 2  

页码: 925-930

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.354860

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The nucleation of misfit dislocations through the extension of dissociated dislocations in the strained interface is considered theoretically. The predicted critical thickness of misfit dislocation nucleation by a dissociated dislocation is compared with that predicted for a perfect dislocation. It is shown that the model of misfit dislocation nucleation by the movement of a dissociated dislocation is more likely.  

 

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