Theoretical consideration of misfit dislocation nucleation by partial dislocations in [001] strained‐layer heterostructures
作者:
J. Zou,
D. J. H. Cockayne,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 2
页码: 925-930
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.354860
出版商: AIP
数据来源: AIP
摘要:
The nucleation of misfit dislocations through the extension of dissociated dislocations in the strained interface is considered theoretically. The predicted critical thickness of misfit dislocation nucleation by a dissociated dislocation is compared with that predicted for a perfect dislocation. It is shown that the model of misfit dislocation nucleation by the movement of a dissociated dislocation is more likely.
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