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Passivation of porous silicon by wet thermal oxidation

 

作者: Huajie Chen,   Xiaoyuan Hou,   Gubo Li,   Fulong Zhang,   Mingren Yu,   Xun Wang,  

 

期刊: Journal of Applied Physics  （AIP Available online 1996）
卷期: Volume 79, issue 6  

页码: 3282-3285

 

ISSN:0021-8979

 

年代: 1996

 

DOI:10.1063/1.361226

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A wet thermal oxidation method is proposed to passivate the electrochemically etched porous silicon. Bright and stable photoluminescence is achieved by wet oxidation at relatively low temperatures of 400–500 °C. The Fourier transform infrared absorption shows that the formation of SiH(O3), SiH(SiO2), SiH2(O2) bonds may be responsible to the stabilization of luminescence under the laser illumination. ©1996 American Institute of Physics.

 

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