Kinetic model of element III segregation during molecular beam epitaxy of III‐III’‐V semiconductor compounds
作者:
O. Dehaese,
X. Wallart,
F. Mollot,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 1
页码: 52-54
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114180
出版商: AIP
数据来源: AIP
摘要:
Segregation of column III atoms during molecular beam epitaxy of III‐III’‐V semiconductor compounds causes nonabrupt interfaces and a surface composition different from the bulk one. To derive concentration profiles, a thermodynamical equilibrium model has been used for a long time. This model applies well to describe segregation processes at high growth temperatures, but fails in predicting concentration profile variations with substrate temperature. We have thus developed a kinetic model which correctly takes into account the evolution with the growth temperature. We apply this model to the case of indium segregation in the GaxIn1−xAs/GaAs system. The calculated indium concentration profiles are compared to those obtained with the thermodynamical equilibrium model. A kinetic limitation of segregation is shown to appear at low substrate temperatures and sufficiently high growth rates. This limitation is predicted to arise below 400 °C for a growth rate of 1 monolayer/s for In segregation in the GaxIn1−xAs/GaAs system. ©1995 American Institute of Physics.
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