The field‐emission current‐voltage behavior was examined for germanium crystals ranging from 0.001‐&OHgr;cmnto 0.0006‐&OHgr;cmptype, whose surfaces were prepared by high‐field evaporation. In contrast to the emission fromn‐type crystals from which linear Fowler‐Nordheim data were always obtained, the emission fromp‐type crystals produced nonlinear F‐N curves which were strongly influenced by temperature and illumination. This behavior was caused by the presence of a narrow, high‐resistance region near the emitting surface of thep‐type crystals. It is proposed that this depletion region was produced by surface inversion due to field penetration. Supporting evidence for this hypothesis was obtained from the spectral response and quantum efficiency of photoenhanced field emission and from measurements of the resistance and spatial profile of the depletion region. There was also evidence for carrier multiplication at high fields, leading to avalanche breakdown of the depletion region.