The need to understand dopant redistribution in refractory metal silicides is important for reliable fabrication of polycide gates and other silicide‐containing structures in VLSI devices. This paper will review work on dopant redistribution in silicides with emphasis on polycide structures. Of particular concern is the high‐temperature sintering step required to form stable silicide and polycide structures. Results from conventional furnace sintering indicate that dopants can diffuse rapidly through certain silicides. The use of rapid thermal processing techniques to minimize dopant redistribution during the sintering step will also be reviewed. One conclusion is that our understanding of dopant redistribution in refractory metal silicides is limited and additional studies are required.