Substrate heating and emitter dopant effects in laser‐annealed solar cells
作者:
R. T. Young,
R. F. Wood,
W. H. Christie,
G. E. Jellison,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 4
页码: 313-315
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92704
出版商: AIP
数据来源: AIP
摘要:
This letter provides the first experimental evidence that substrate heatingduringpulsed‐laser annealing (PLA) of ion‐implanted silicon can significantly improve the electrical properties of the laser recrystalized region due to the reduction of the regrowth velocity. It is also shown that by using the optimum PLA condition, the open‐circuit voltageVOCand the fill factor of ion‐implanted, laser‐annealed solar cells are improved by increasing the emitter dopant concentrations, whereas the short‐circuit currentJSCremains fairly constant, results which are in qualitative agreement with theoretical predictions.
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