Oxidation of silicon by ion implantation and laser irradiation
作者:
S. W. Chiang,
Y. S. Liu,
R. F. Reihl,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 9
页码: 752-754
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92879
出版商: AIP
数据来源: AIP
摘要:
Q‐switched laser irradiation has been used to anneal O+‐implanted silicon to form SiO2layers. Results of differential Fourier‐transformed infrared spectroscopy and transmission electron microscopy confirm the formation of oxide layers. Segregation of oxygen toward the surface was observed by secondary ion mass spectroscopy and correlated with resolidification velocities, which vary as a function of laser energy densities.
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