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Transport and optical properties of semiconductor quantum wires

 

作者: A. Forchel,   A. Menschig,   B. E. Maile,   H. Leier,   R. Germann,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 2  

页码: 444-450

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585587

 

出版商: American Vacuum Society

 

关键词: III−V SEMICONDUCTORS;QUANTUM WELL STRUCTURES;WIRES;FABRICATION;TRANSPORT PROCESSES;EMISSION SPECTRA;LITHOGRAPHY;ELECTRON BEAMS;ETCHING;HIGH−RESOLUTION METHODS

 

数据来源: AIP

 

摘要:

We have fabricated III–V semiconductor quantum wires which display a variety of novel transport and optical phenomena. For the definition of structures with widths down to 40 nm high resolution electron beam lithography and dry etching have been used. For the observation of dimensionality dependent effects in optical spectra buried quantum wires have been developed by overgrowth of dry etched structures and implantation induced intermixing. The physical properties of the nanometer structures have been analyzed by magnetotransport studies and emission spectroscopy.

 

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