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Model for the Formation of Silicon Carbide from the Pyrolysis of Dichlorodimethylsilane in Hydrogen: I, Silicon Formation from Chlorosilanes

 

作者: Domenick E. Cagliostro,   Salvatore R. Riccitiello,  

 

期刊: Journal of the American Ceramic Society  (WILEY Available online 1993)
卷期: Volume 76, issue 1  

页码: 39-48

 

ISSN:0002-7820

 

年代: 1993

 

DOI:10.1111/j.1151-2916.1993.tb03687.x

 

出版商: Blackwell Publishing Ltd

 

数据来源: WILEY

 

摘要:

Silicon tetrachloride is a major product of the pyrolysis of dichlorodimethylsilane in hydrogen. A model is developed for the deposition of silicon from the reduction of silicon tetrachloride with hydrogen in a tubular reactor at temperatures from 700° to 1100°C and 1.013 × 105Pa (1 atm) pressure. Concentrations of silicon tetrachloride varied from 1 to 9 vol%. Gas chromatography was used to determine the volatile products of reaction, and gravimetric analysis was used to determine the total silicon deposition on the tube. The model, based on the experimental data, assumes the following reversible chemical reactions:The rate constants derived from a nonlinear regression analysis are report

 

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