Model for the Formation of Silicon Carbide from the Pyrolysis of Dichlorodimethylsilane in Hydrogen: I, Silicon Formation from Chlorosilanes
作者:
Domenick E. Cagliostro,
Salvatore R. Riccitiello,
期刊:
Journal of the American Ceramic Society
(WILEY Available online 1993)
卷期:
Volume 76,
issue 1
页码: 39-48
ISSN:0002-7820
年代: 1993
DOI:10.1111/j.1151-2916.1993.tb03687.x
出版商: Blackwell Publishing Ltd
数据来源: WILEY
摘要:
Silicon tetrachloride is a major product of the pyrolysis of dichlorodimethylsilane in hydrogen. A model is developed for the deposition of silicon from the reduction of silicon tetrachloride with hydrogen in a tubular reactor at temperatures from 700° to 1100°C and 1.013 × 105Pa (1 atm) pressure. Concentrations of silicon tetrachloride varied from 1 to 9 vol%. Gas chromatography was used to determine the volatile products of reaction, and gravimetric analysis was used to determine the total silicon deposition on the tube. The model, based on the experimental data, assumes the following reversible chemical reactions:The rate constants derived from a nonlinear regression analysis are report
点击下载:
PDF
(623KB)
返 回