After pulsed ruby laser annealing of tellurium implanted silicon considerable impurity redistribution is observed with little surface segregation. In the bulk, substitutional fractions of 85-90% are found, independent of the Te-concentration or the presence of phosphorus or boron. Computer simulations show that the slight narrowing of the Te-yield curves can be accounted for by the Te-vibrational amplitudes. The displacement cross-section of substitutional Te-atoms in laser annealed silicon for 2 MeV He+-ions is determined as 5.6(20) × 10−21cm2. In contrast to pulsed laser annealing, oven annealing results in strongly narrowed Te-yield curves with a high minimum yield, indicating a small true substitutional impurity fraction.