Electrical characteristics of aluminum-zirconium oxide-barium magnesium fluoride-p silicon MIS capacitors
作者:
T. S. Kalkur,
R. Y. Kwor,
L. Levenson,
L. Kammerdiner,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1992)
卷期:
Volume 2,
issue 1-4
页码: 327-336
ISSN:1058-4587
年代: 1992
DOI:10.1080/10584589208215752
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The Barium Magnesium Fluoride films have been deposited on p-Si wafers at a temperature in the range of 400-450°C in an ion assisted deposition system. X-ray diffraction analysis shows that the films are polycrystalline in nature. The BMF films were encapsulated with an electron beam evaporated Zro2 film of thickness 300°A. The capacitance-voltage (C-V) charactersitics of Aluminum-ZrO2-BMF-p Si MIS capacitors show hysteresis and the direction of the hysterisis correponds to ferroelectric polarization in the BMF film. The shift in threshold voltage was found to depend on bias voltage, ramp rate as well as measurement temperature.
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