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Low Temperature Silicon Thermometer and Bolometer

 

作者: R. Bachmann,   H. C. Kirsch,   T. H. Geballe,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1970）
卷期: Volume 41, issue 4  

页码: 547-549

 

ISSN:0034-6748

 

年代: 1970

 

DOI:10.1063/1.1684573

 

出版商: AIP

 

数据来源: AIP

 

摘要:

By simple diffusion and etching procedures low temperature sensitive surface layers can be prepared on otherwise insulating silicon substrates. Temperature coefficients of the resistance of these layers of the order of unity can be obtained at any temperatures below 20 K. The usefulness of this silicon device as a low temperature thermometer and bolometer is demonstrated.

 

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