Ion beam induced epitaxial crystallization of NiSi2
作者:
M. C. Ridgway,
R. G. Elliman,
J. S. Williams,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 21
页码: 2117-2119
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102989
出版商: AIP
数据来源: AIP
摘要:
Ion beam induced epitaxial crystallization of amorphous NiSi2is reported. Epitaxial NiSi2layers on (111) Si substrates were implanted at ∼−196 °C with low‐energy Si ions to form an amorphous surface layer. The recrystallization of amorphous NiSi2was induced at 13–58 °C by irradiating with high‐energy Si or Ne ions. Recrystallization proceeded in a layer‐by‐layer manner from the original amorphous/crystalline interface with an activation energy of 0.26±0.07 eV.
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