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Dynamic Image Forces near Semiconductor‐Vacuum Interfaces: Role of Quantum‐Mechanical Corrections

 

作者: A. M. Gabovich,   V. M. Rozenbaum,   A. I. Voitenko,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1903)
卷期: Volume 696, issue 1  

页码: 963-970

 

ISSN:0094-243X

 

年代: 1903

 

DOI:10.1063/1.1639809

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Polarization energiesW(z) induced by charged particles moving perpendicular to the vacuum‐semiconductor interfaces have been calculated on the basis of the perturbation theory. The adopted approach takes into account both spatial and temporal dispersions of the electrode dielectric functions &Vegr;(k, &ohgr;). It is shown that the quantum‐mechanical character of thek‐dependence of &Vegr;(k, &ohgr;) leads to the smootherW(z) dependence than in the semiclassical case and to the drastic reduction of the dynamical corrections to the static image forces. © 2003 American Institute of Physics

 

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