Dynamic Image Forces near Semiconductor‐Vacuum Interfaces: Role of Quantum‐Mechanical Corrections
作者:
A. M. Gabovich,
V. M. Rozenbaum,
A. I. Voitenko,
期刊:
AIP Conference Proceedings
(AIP Available online 1903)
卷期:
Volume 696,
issue 1
页码: 963-970
ISSN:0094-243X
年代: 1903
DOI:10.1063/1.1639809
出版商: AIP
数据来源: AIP
摘要:
Polarization energiesW(z) induced by charged particles moving perpendicular to the vacuum‐semiconductor interfaces have been calculated on the basis of the perturbation theory. The adopted approach takes into account both spatial and temporal dispersions of the electrode dielectric functions &Vegr;(k, &ohgr;). It is shown that the quantum‐mechanical character of thek‐dependence of &Vegr;(k, &ohgr;) leads to the smootherW(z) dependence than in the semiclassical case and to the drastic reduction of the dynamical corrections to the static image forces. © 2003 American Institute of Physics
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