首页   按字顺浏览 期刊浏览 卷期浏览 Electro‐optical properties of InGaAs layers grown by hydride vapour phase epitaxy
Electro‐optical properties of InGaAs layers grown by hydride vapour phase epitaxy

 

作者: G. Attolini,   C. Bocchi,   R. Fornari,   C. Pelosi,   J. Oswald,   J. Pastrnak,  

 

期刊: Crystal Research and Technology  （WILEY Available online 1990）
卷期: Volume 25, issue 1  

页码: 25-30

 

ISSN:0232-1300

 

年代: 1990

 

DOI:10.1002/crat.2170250107

 

出版商: WILEY‐VCH Verlag

 

数据来源: WILEY

 

摘要:

AbstractA series of epitaxial layers of the InGaAs alloy were deposited on (001) oriented InP substrates by using hydride VPE technique. The layers were characterized by Double Crystal Diffractometry (DCD), Photoluminescence (PL), Hall effect and Capacitance‐Voltage (C‐V) measurements. The growth parameters and the quality of the grown layers are discussed on the basis of electrical and structural data analy

 

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