Theoretical interpretation of scanning tunneling microscopy images: Application to the molybdenum disulfide family of transition metal dichalcogenides
作者:
Terry R. Coley,
William A. Goddard,
John D. Baldeschwieler,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 2
页码: 470-474
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585591
出版商: American Vacuum Society
关键词: SCANNING TUNNELING MICROSCOPY;IMAGE FORMING;AB INITIO CALCULATIONS;MOLYBDENUM SULFIDES;MOLYBDENUM SELENIDES;SURFACE STRUCTURE;TUNNEL EFFECT;CURRENT DENSITY;ELECTRONIC STRUCTURE
数据来源: AIP
摘要:
We have performedabinitioquantum mechanical calculations to describe scanning tunneling microscopy (STM) images of MoS2and MoTe2. These results indicate that the interpretation of the STM images of these and related materials depends sensitively on experimental conditions. For example, determining whether the maximum tunneling current correlates to the top atom (S or Te) or to the second‐layer atom (Mo) requires information on the tip‐sample separation. Based on these results we discuss some STM experimental procedures which would allow assignment of the chemical identity of STM spots with greater certainty.
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