Optical reflection studies of lattice disorder in iodine implanted CdS
作者:
JamesA. Hutchby,
期刊:
Radiation Effects
(Taylor Available online 1972)
卷期:
Volume 16,
issue 3-4
页码: 189-192
ISSN:0033-7579
年代: 1972
DOI:10.1080/00337577208231219
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Optical reflectivity spectra (3.45 to 5.90 eV) of CdS implanted with 40 keV I+are presented for doses between 5 × 1013and 1 × 1016ions/cm2and for isochronal anneals up to 550°C. Typical peaks (E1:A, B) present in crystalline CdS decrease with increasing dose until they are no longer resolvable; however, a prominent saturation observed in Si and somewhat in GaAs is not found for doses up to 1 × 1016ions/cm2. Correlation with similar results obtained from the Rutherford scattering technique suggests the reflection variations are damage related and verifies previous results that anobservable amorphous layer is not formed. Annealing tends to increase the peaks with complete restoration occurring for doses 7 × 1014ions/cm2annealed at 500°C.
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