Monte Carlo simulation for dissociation of hydrogen during electron assisted chemical vapor deposition of diamond
作者:
Hidetoshi Saitoh,
Hiroyuki Mima,
Takashi Ishiguro,
Yukio Ichinose,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 11
页码: 7002-7004
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.355056
出版商: AIP
数据来源: AIP
摘要:
An H2dissociation model in the diamond deposition process is described and discussed using the results of a Monte Carlo computer simulation. A hot filament assisted chemical vapor deposition technique with substrate bias voltage was assumed and electron trajectories were computed. In this model, molecular hydrogen is dissociated by the impact of electrons accelerated towards the substrate. The number of dissociative collisions occurring while one electron flies from the hot filament to the substrate was calculated varying both the bias voltage and the gas pressure. The results we obtained here suggest that (1) the number of dissociations increases toward the biased substrate; (2) the production of H atoms generated in the gas phase is a function of the ratio of electric field to gas pressure,E/p; and (3) there is an optimum condition ofE/prequired to obtain efficient dissociation.
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