Cross‐sectional views of epitaxial structures yield much information when examined by transmission electron microscopy. Since the growth direction then lies in the plane of observation, rather than normal to it (as is usual), the overgrowth, original growth interface, and substrate can be imaged either simultaneously or individually. A realization of the suitable technique for preparing thin cross‐sectional samples is described. Applications to continuously graded GaAsxP1−x/GaAs and step‐graded InxGa1−xP/GaP are shown.