The formation of discrete layers of dislocation loops near the projected ion ranges (Rploops) of 65–80 keV, high‐dose (5×1015–2×1016/cm2) P+‐implanted (001)Si was observed by cross‐sectional transmission electron microscopy (XTEM). Both the energy and dose dependence of the annealing behaviors ofRploops provided strong evidences that they are related to P clustering. The inactivation of dopants due to precipitation, hence the appearance ofRploops, is correlated to the sheet resistance data. The retardation of the solid phase epitaxial growth was shown to be related to the formation ofRploops. UsingRploops as an indicator of changes in point‐defect distribution, a combined XTEM and plan‐view TEM study was found to be most appropriate for the study of the precipitation process in high‐dose P+‐implanted silicon.