Investigations of Stranski-Krastanov growth kinetics of Si-dots on 6H-SiC(0001)
作者:
Andreas Fissel,
Kay Pfennighaus,
Wolfgang Richter,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 20
页码: 2981-2983
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120236
出版商: AIP
数据来源: AIP
摘要:
The growth kinetics of Si dots grown on 6H-SiC(0001) by molecular beam epitaxy were studied in real time by reflection high-energy electron diffraction. The critical thickness for the Stranski–Krastanov growth mode transition was found to be kinetically delayed leading to a gradual decrease of this thickness with increasing temperature(T).AtT<625 °Cand coverages below the critical thickness, a post-deposition evolution of dots is clearly established. The dot growth process is, under these conditions, mainly determined by the mass transfer out of the two-dimensional layer towards the Si dots. The dots grown on top of a 1 monolayer (ML) thick wetting layer are quantum sized with typical dimensions of 5–6 nm in height and 20–30 nm in diameter after a long post-deposition evolution times at 2–3 ML coverages. Above 625 °C and coverages above the critical thickness, the dot growth is only determined by surface-diffusion kinetics resulting in the growth of larger dots. ©1997 American Institute of Physics.
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