Wideband heterodyne detection in the far infrared with extrinsic Ge photoconductors
作者:
G. Dodel,
J. Heppner,
E. Holzhauer,
E. Gornik,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 8
页码: 4254-4259
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.332679
出版商: AIP
数据来源: AIP
摘要:
The heterodyne performance of Ge photoconductors doped with shallow impurities was investigated using optically pumped far infrared lasers. Two lasers operating on the 67‐&mgr;m NH3Raman line generated difference frequencies from 0–100 MHz. An additional frequency point at 1.155 GHz was produced with two methanol‐isotope lasers at 118 &mgr;m. For three detectors with different doping levels IF bandwidths of 141, 63, and 8 MHz were measured using local oscillator powers of a few milliwatts. The detector gain and quantum efficiency were calculated from shot noise measurements. For impedance matched operation the calculated noise equivalent power (NEP) values are 2×10−18W Hz−1for the fastest detector and 6.5×10−19W Hz−1for the slowest detector.
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