OBSERVATION OF MISFIT DISLOCATIONS IN GaAs&sngbnd;Ge HETEROJUNCTIONS
作者:
G. O. Krause,
E. C. Teague,
期刊:
Applied Physics Letters
(AIP Available online 1967)
卷期:
Volume 10,
issue 9
页码: 251-253
ISSN:0003-6951
年代: 1967
DOI:10.1063/1.1754934
出版商: AIP
数据来源: AIP
摘要:
Epitaxial heterojunctions have been prepared by chemical vapor deposition of Ge onto (001) GaAs substrates using the hydrogen reduction of GeCl4. Scanning x‐ray microscopy revealed a cross‐grid of dislocation lines at the interface. It is believed that these two sets of misfit dislocations in the interface plane result from a partial accommodation of the lattice mismatch between Ge and GaAs.
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