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Scanning tunneling microscope images of native defects on the ZnSe(110) surface

 

作者: Wei‐Min Hu,   John D. Dow,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 4  

页码: 907-909

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584578

 

出版商: American Vacuum Society

 

关键词: ZINC SELENIDES;CRYSTAL FACES;SURFACE STRUCTURE;CRYSTAL DEFECTS;SCANNING TUNNELING MICROSCOPY;MATHEMATICAL MODELS;ZnSe

 

数据来源: AIP

 

摘要:

Scanning tunneling microscope images of native antisite defects at the relaxed (110) surface of ZnSe are predicted. The images of a particular sample depend on the sign of the voltage bias and the voltage sweep of the sample relative to the microscope tip, and whether that sweep causes a deep level to actively participate in the tunneling. Under certain conditions the images give the appearance of two defects at incorrect sites.

 

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