Isothermal changes in tensile stresses depending on the amount of MoSi2formed in sputter deposited films which have multilayered structures of molybdenum and silicon (atomic ratio, Si/Mo=2) have been investigated. The amount of MoSi2formed in the films was controlled isothermally by changing a layer thickness parametert* from 0 to 220 Å which was the sum of both the molybdenum layer and silicon layer thicknesses. The films were deposited on oxidized silicon wafers and sintered in the temperature range 440–1000 °C. The tensile stress increases to 1.5×1010dyn cm−2linearly with increasing 1/t* and saturates with further increase in 1/t*. Since 1/t* is proportional to the amount of MoSi2formed in the films, the stress is found to increase with an increasing amount of crystallized MoSi2in the films and to saturate when the whole multilayered films are completely converted into MoSi2films. Furthermore, it is suggested that relaxation of the tensile stress occurs in proportion to the amount of crystallized MoSi2.