The luminescence data of Schmid, Thewalt, and Dumke on heavily dopedp‐type Si has been analyzed to provide the effective band gap for then⋅pproduct at room temperature inp+Si. The results are in very good agreement with the measurements of Slotboom and DeGraaff, and extend the acceptor concentrations for which the effective band gap is available by a factor of four. The disagreement of these results with the values obtained from infrared absorption measurements is further evidence of a nonrigid band‐gap shift.