Phase modulation in GaAs/AlGaAs double heterostructures. I. Theory
作者:
J. Faist,
F.‐K. Reinhart,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 11
页码: 6998-7005
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345045
出版商: AIP
数据来源: AIP
摘要:
This work aims at a systematic study of phase modulation in GaAs/AlGaAs double‐heterostructure waveguides with different doping profiles. Both theoretical (part I) and experimental (part II) aspects are investigated, leading to interesting new results. Phase modulation is the sum of a linear electro‐optic term, a quadratic electro‐optic term, and a free‐carrier term. The carrier term is shown to be the sum of a plasma term, an intervalence‐band term (for holes only), a band‐filling term, and a band‐shrinkage term, the latter being due to many‐body effects. A new analytic expression for the band‐filling term is derived which shows that the band‐filling effect does not depend on the carrier effective mass. We prove that the band‐shrinkage term is approximately half of the band‐filling term, but has opposite sign. The phase modulation is computed using an overlap integral between the optical intensity and the local refractive‐index difference. We also report an analytic expression for the modulation efficiency of ap‐i‐njunction double‐heterostructure modulator. This expression is very accurate and only requires knowledge of the depletion width and the guiding parameters.
点击下载:
PDF
(869KB)
返 回